가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IPB027N10N5ATMA1 | 26,000 | 1K | 1d | ||||||||
| Newark | IPB027N10N5ATMA1 | 596 | 1 | Cut Tape | ||||||||
| Future Electronics | IPB027N10N5ATMA1 | 1,000 | 1K | Tape & Reel | ||||||||
| Arrow Electronics | IPB027N10N5ATMA1 | 1,765 | 1 | |||||||||
| DigiKey | IPB027N10N5ATMA1CT-ND | 2,508 | 1 | Cut Tape |
공급망
Country of OriginAustria, Germany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-17
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
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100V, N-Ch, 3.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
STMicroelectronicsSTH150N10F7-2
N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
설명
유통업체에서 제공한 Infineon IPB027N10N5ATMA1에 대한 설명입니다.
Mosfet, N-Ch, 100V, 166A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB027N10N5ATMA1
Trans MOSFET N-CH 100V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P
OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.92 nF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation250 W
Rds On Max2.7 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time52 ns
Turn-On Delay Time26 ns
Dimensions
Height4.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책