Infineon IPA65R650CEXKSA1

Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
$ 0.462
Production

가격 및 재고

데이터시트 및 문서

Infineon IPA65R650CEXKSA1에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet16 페이지0년 전
Datasheet16 페이지0년 전

TME

재고 내역

3개월간의 트렌드:
+3.21%

공급망

Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-04-16
Lifecycle StatusProduction (Last Updated: 4 months ago)

관련 부품

STMicroelectronicsSTF12N65M2
N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
STMicroelectronicsSTF10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTFH10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
MOSFET N-CH 650V 7.2A TO220 / N-Channel 650 V 7.2A (Tc) 68W (Tc) Through Hole PG-TO220-FP
Trans MOSFET N-CH 500V 11.1A Automotive 3-Pin(3+Tab) TO-220FP Tube

설명

유통업체에서 제공한 Infineon IPA65R650CEXKSA1에 대한 설명입니다.

Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
Infineon SCT
28W 20V 3.5V 23nC@ 10V 2N 650V 650m¦¸@ 10V 10.1A 440pF@ 100V TO-220F 10.5mm*4.7mm*15.99mm
650V 7A 28W 650m´Î@10V2.1A 3.5V@210Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPA65R650CEXKSA1
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

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  • Infineon Technologies
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부품 번호 별칭

이 부품은 다음과 같은 대체 부품 번호로 알려져 있을 수 있습니다.

  • IPA65R650CE
  • SP001295804