관련 부품
InfineonIPA60R650CEXKSA1
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
InfineonIPA50R800CEXKSA2
CoolMOS CE Series N-Channel 500 V 4.1 A (Tc) 26.4 W (Tc) MOSFET - PG-TO220-FP
InfineonIPA60R1K0CEXKSA1
CoolMOS CE Series N-Channel 600 V 6.8 A (Tc) 26 W (Tc) MOSFET - PG-TO220-FP
설명
유통업체에서 제공한 Infineon IPA60R800CEXKSA1에 대한 설명입니다.
MOSFET N-CH 600V TO-220-3 / Trans MOSFET N-CH 600V 5.6A 3-Pin(3+Tab) TO-220FP Tube
N-Channel 600 V 5.6 A 800 mO 17.2 nC CoolMOS CE Power Transistor - TO-220FP, PG-TO220-3, RoHS
Infineon SCT
Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.299997 g
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance373 pF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance800 mΩ
Package Quantity500
Power Dissipation27 W
Rds On Max800 mΩ
Rise Time7 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time9 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책