공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-06-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon IPA60R600P7XKSA1에 대한 설명입니다.
Transistor MOSFET N-CH 650V 6A 3-Pin TO-220FP Tube
Power Field-Effect Transistor, 6A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 600V, 6A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPA60R600P7XKSA1
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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기술 사양
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation21 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Package Quantity500
Power Dissipation21 W
Turn-Off Delay Time37 ns
Turn-On Delay Time7 ns
Dimensions
Height20.7 mm