공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-03-26
Lifecycle StatusNRND (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Infineon IMW65R039M1HXKSA1에 대한 설명입니다.
Silicon Carbide MOSFET, Single, N Channel, 46 A, 650 V, 0.039 ohm, TO-247
Power Field-Effect Transistor, 46A I(D), 650V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Sic Mosfet, N-Ch, 650V, 46A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:176W Rohs Compliant: Yes |Infineon Technologies IMW65R039M1HXKSA1
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R039M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.
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기술 사양
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)46 A
Drain to Source Resistance50 mΩ
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1