Infineon IKZ75N65EH5XKSA1

IKZ75N65EH5 Series 650 V 90 A Through Hole DuoPack IGBT - PG-TO-247-4

Trans IGBT Chip N-CH 650V 90A 4-Pin(4+Tab) TO-247

Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel, TO-247

IGBT, 90 A, 1.65 V, 395 W, 650 V, TO-247, 4 Pins

IGBT Transistors IGBT PRODUCTS

Infineon IKZ75N65EH5XKSA1 IGBT

IC MCU 16BIT 192KB FLASH 44LQFP

High speed H5 technology offering

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Igbt, Single, 650V, 90A, To-247; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:4Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKZ75N65EH5XKSA1