Infineon IKW75N65RH5XKSA1

Infineon IKW75N65RH5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

IGBT, 650 V, 80 A, 395W, To-247, 1.65 Vsat

Trans IGBTChip N-CH 650V 80A 395W 3-Pin(3+Tab) TO-247 Tube

晶体管, IGBT, 650V, 80A, 395W, TO-247;

IGBT 650V 75A +SIC-DIODE TO-247

Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKW75N65RH5XKSA1

650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package.The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.