공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-14
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
관련 부품
InfineonIHW40N120R3FKSA1
Trans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube
InfineonIHW40N65R5XKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
InfineonIHW50N65R5XKSA1
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
onsemiFGH40N60UFDTU
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
onsemiFGH40N60SMD
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
설명
유통업체에서 제공한 Infineon IKW50N60TFKSA1에 대한 설명입니다.
IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
600 V, 50 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
IGBT, N, 600V, 50A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:50A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:333W; Power Dissipation Pd:333W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Hard-switching 600 V, 50 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature150 °C
Max Power Dissipation333 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation333 W
Schedule B8541290080