Infineon IKW30N65WR5XKSA1

650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Trans IGBT Chip N-CH 650V 60A 185W 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

Infineon IKW30N65WR5XKSA1 IGBT, 30 A 650 V PG-TO247-3

Reverse conducting IGBT with monolithic body diode

TO-247-3 IGBT Transistors / Modules ROHS

晶体管, IGBT, 650V, 60A, 175度 C, 185W;

Igbt, Single, 650V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.4V; Power Dissipation:185W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKW30N65WR5XKSA1

High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ 5 WR5 IGBT features an optimized diode that is adequately rated for the target application. WR5 is recommended for use in the PFC stage in air conditioning, DC/DC in welding, AC/DC in UPS and MPPT in solar string inverters. The excellent price/performance ratio of WR5 IGBT allows access to the high-performance technology also for cost sensitive customers.