유통업체에서 제공한 Infineon IKQ120N120CS7XKSA1에 대한 설명입니다.
IGBT Trench Field Stop 1200 V 216 A 1004 W Through Hole PG-TO247-3-46
Trans IGBT Chip N-CH 1200V 216A 1004W 3-Pin(3+Tab) TO-247 Tube
IGBT, 216 A, 1.65 V, 1.004 kW, 1.2 kV, TO-247 Plus, 3 Pins
1.004KW 1.65V , 2V@ 15V,120A 216A 20.1mm*15.9mm*5.1mm
IGBT, SINGLE, 1.2KV, 216A, TO-247PLUS;
IGBT TRENCH FS 1200V 216A TO247
Infineon IKQ120N120CS7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 120 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
Insulated Gate Bipolar Transistor
Igbt, Single, 1.2Kv, 216A, To-247 Plus; Continuous Collector Current:216A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:1.004Kw; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°Crohs Compliant: Yes |Infineon Technologies IKQ120N120CS7XKSA1
Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.