Infineon IGW75N60TFKSA1

Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube, PG-TO247-3, RoHS

Infineon IGW75N60TFKSA1 IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247

IGBT Transistors LOW LOSS IGBT TECH 600V 75A

IGBT TRENCH/FS 600V 150A TO247-3

IGBT, 75 A, 2 V, 428 W, 600 V, TO-247, 3 Pins

TO-247-3 IGBT Transistors / Modules ROHS

Transistor IGBT N-Ch 600V 150A TO247

150 A 600 V N-CHANNEL IGBT TO-247AD

IGW75N60 - DISCRETE IGBT WITHOUT

428W 1.5V 600V 150A TO-247 15.9mm*5.3mm*20.9mm

IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W

Hard-switching 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.