유통업체에서 제공한 Infineon IGW50N65H5FKSA1에 대한 설명입니다.
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
IGW50N65H5 Series 650 V 80 A Through Hole TRENCHSTOPTM 5 Gen IGBT - TO247-3
Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
TRANSISTOR, HIGH SPEED 5 IGBT, N-CHANNEL, 650V, 50A, 175C, PG-TO247-3
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
305W 1.65V 650V 80A TO-247 16.13mm*5.21mm*21.1mm
650 V IGBT in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
TO-247-3 IGBT Transistors / Modules ROHS
IGBT TrenchStop N-Channel 650V 50A TO247
IGBT Transistors IGBT PRODUCTS
IGW50N65 - DISCRETE IGBT WITHOUT
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
The 650 V, 50 A hard-switching IGBT TRENCHSTOP™ 5 in TO-247 package redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.