공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-04-18
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-10-15
LTD Date2027-04-15
설명
유통업체에서 제공한 Infineon IGW40N60TPXKSA1에 대한 설명입니다.
600 V 67 A 246 W Through Hole Trench Field Stop IGBT Transistor - PG-TO247-3
Trans IGBT Chip N-CH 600V 80A 246W 3-Pin(3+Tab) TO-247 Tube
600 V, 40 A IGBT in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
TO-247-3 IGBT Transistors / Modules ROHS
IGW40N60 DISCRETE IGBT WITHOUT ANTI-PAR;
306W 1.95V 600V 67A TO-247 16.13mm*5.21mm*21.1mm
IGBT TRENCH/FS 600V 67A TO247-3
Insulated Gate Bipolar Transistor
High speed 600 V, 40 A hard-switching TRENCHSTOP™ Performance IGBT in TO-247 package combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behaviour.
Igbt, Single, 600V, 67A, To-247; Dc Collector Current:67A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:246W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW40N60TPXKSA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Max Collector Current67 A
Max Power Dissipation246 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation246 W
Schedule B8541290080