Infineon IGW30N100TFKSA1

Trans IGBT Chip N-CH 1000V 60A 412000mW Automotive 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247

Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

TRANSISTOR, IGBT, 1KV, 60A, TO-247

IGW30N100 DISCRETE IGBT WITHOUT ANTI-PA;

IGBT TRENCH FS 1000V 60A TO247-3

Transistor, Igbt, 1Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:412W; Collector Emitter Voltage V(Br)Ceo:1Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications