공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-12-13
Lifecycle StatusProduction (Last Updated: 3 months ago)
설명
유통업체에서 제공한 Infineon IAUT165N08S5N029ATMA2에 대한 설명입니다.
MOSFET N-CH 80V 165A 8HSOF / N-Channel 80 V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1
80V, N-Ch, 2.9 mΩ max, Automotive MOSFET, TOLL, OptiMOS™-5, PG-HSOF-8, RoHS
Infineon SCT
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested
Mosfet, Aec-Q101, N-Ch, 80V, Hsof; Transistor Polarity:N Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IAUT165N08S5N029ATMA2
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
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- INFINEON TECH
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)165 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation167 W
Manufacturer Package IdentifierPG-HSOF-8
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity2000
PackagingTape & Reel
Power Dissipation167 W
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Dimensions
Height2.3 mm