Infineon FS50R12KE3

Trans IGBT Module N-CH 1200V 75A 270000mW 28-Pin ECONO 2 Tray

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

IGBT - Standard Modules 1200V 50A 3-PHASE

IC MCU 32BIT 32KB FLASH 32TQFP

IGBT MODULE, 1200V, ECONOPACK2; Transistor Type:3-Phase Bridge + NTC Thermistor; Voltage, Vces:1200V; Current Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.15V; Power Dissipation:270W; Case Style:Econopack 2; Termination Type:Solder; Operating Temperature Range:-40°C to +125°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:100A; Power, Pd:270W; Temperature, Current:80°C; Temperature, Full Power Rating:25°C; Transistors, No. of:6; Voltage, Vce Sat Typ:1.7V

IGBT module Connection: Soldering pins Fastening: 4 x M2 Configuration: 3-phasig Housing type: EconoPACK™2 Collector-emitter saturation voltage: 2.15 V Energy dissipation during make-time: 5 mJ Energy dissipation during turn-off time: 6.5 mJ