공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
Rochester ElectronicsDDB6U30N08VRBOMA1
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel
설명
유통업체에서 제공한 Infineon FS20R06VE3BOMA1에 대한 설명입니다.
Trans IGBT Module N-CH 600V 25A 71500mW 13-Pin EASY750 Tray
EasyPACK Series 600 V 25 A 71.5 W Chassis Mount IGBT Module
600 V, 20 A sixpack IGBT module, AG-EASY750-1, RoHS
Infineon SCT
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
EasyPACK 750 600V sixpack IGBT module with IGBT3. | Summary of Features: High power density; Established Easy module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; ups; aircon; medical; batterycharger; solar
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기술 사양
Physical
Case/PackageModule
Contact PlatingTin
MountScrew
Number of Pins13
Number of Terminals13
Technical
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Max Collector Current25 A
Max Operating Temperature175 °C
Max Power Dissipation71.5 W
Min Operating Temperature-40 °C
Number of Elements6
Package Quantity40
Power Dissipation71.5 W
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
REACH SVHCYes
RoHSCompliant
규정 준수 정책