IGBT, LOW POW, 1200V, 25A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:175W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:175W
EasyPIM™ 2B 1200 V, 25 A reverse conducting PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Also available with Thermal Interface Material or as variation with soldering connection technology: FP25R12W2T4.Smaller inverter size can be realized by replacing with the FP25R12W1T7_B11 an EasyPIM™1B module with TRENCHSTOP™ IGBT7.