Infineon FF600R12IP4BOSA1

Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount

Trans IGBT Module N-CH 1.2KV 600A 8-Pin PRIME2

Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray

1200 V 600 A 3350 W Chassis Mount Trench Field Stop Half Bridge IGBT Module

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel

IGBT, H/B NTC, 1200V, 600A, PRIMEPA

IC OPAMP JFET 4 CIRCUIT 14SOIC

Igbt Mod, 1.2Kv, 600A, 3.35Kw; Continuous Collector Current:600A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:3.35Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FF600R12IP4BOSA1

1200V PrimePACK2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; Unbeatable Robustness; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups; traction