유통업체에서 제공한 Infineon FF1400R12IP4BOSA1에 대한 설명입니다.
Infineon FF1400R12IP4BOSA1 Series IGBT Module, 1.4 kA 1200 V AG-PRIME3-1, Panel Mount
Trans IGBT Module N-CH 1200V 1.4KA 7650000mW 10-Pin PRIME3-1 Tray
PrimePACK™3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
IGBT Modules; INFINEON; FF1400R12IP4; 2; 1.75 V; 1.2 kV; 7.65 kW
Transistor IGBT Module N-CH 1200V 1400A 20V Screw Mount Tray
FF1400R12IP4 Series 1200 V 1400 A 765 W Half Bridge Dual IGBT Module
1200 V, 1400 A dual IGBT module, AG-PRIME3-1, RoHS
Infineon SCT
IGBT, H/B NTC, 1200V, 1400A, PRIMEPA
IGBT Modules PP IHM I XHP 1 7KV
Insulated Gate Bipolar Transistor, 1200V V(BR)CES
IGBT MOD 1200V 1400A 765000W MOD
PrimePACK™ 3 1200 V, 1400 A half bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and soft switching chip. Also available with Thermal Interface Material.
IGBT,H/B NTC,1200V,1400A,PRIMEPACK; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Max:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12