IGBT, POW, QUAD WITH NTC, 1200V, 50A; Module Configuration:Quad; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:3.2V; Power Dissipation Pd:355W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:14; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:355W