IGBT, HI PO, CHOP NTC, 1700V, 650A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:650A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:4.15kW