공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1982-11-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-02-28
LTD Date2011-08-31
관련 부품
InfineonIRF630NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
설명
유통업체에서 제공한 Infineon BUZ32에 대한 설명입니다.
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB
11 A 200 V 0.4 ohm N-CHANNEL Si POWER MOSFET TO-220
MOSFET N-CH 200V 9.5A TO220AB
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9.5 A
Current Rating9.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance530 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation75 W
Rds On Max400 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height20.75 mm