The BTS5012SDA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions, PG-TO252-5, RoHS
Infineon SCT
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS5012SDA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.
IC, SMART HIGH SIDE PWR SW, TO252-5; Device Type:High Side; Module Configuration:N Channel; Peak Output Current:105A; Supply Voltage Min:5V; Supply Voltage Max:20V; No. of Pins:5; Input Delay:250µs; Output Delay:250µs; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +150°C; Output Resistance:0.012ohm; Supply Voltage Range:5V to 20V