The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.
IC, SMART HIGH SIDE PWR SW, TO220-7; Device Type:High Side; Module Configuration:N Channel; Peak Output Current:130A; Supply Voltage Min:5V; Supply Voltage Max:38V; Driver Case Style:TO-220; No. of Pins:7; Input Delay:300µs; Output Delay:300µs; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +150°C; Output Resistance:0.007ohm; Supply Voltage Range:5V to 38V