공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date1996-04-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-08-29
LTD Date2023-08-29
관련 부품
설명
유통업체에서 제공한 Infineon BTS141BKSA1에 대한 설명입니다.
BTS141 Series 60 V 12 A Through Hole Smart Low Side Power Switch - TO-220-3
N channel vertical power FET in Smart SIPMOS® chip on chip technology, PG-TO220-3, RoHS
Infineon SCT
Power Switch Lo Side 1-OUT 12A 0.031Ohm Automotive 3-Pin(3+Tab) TO-220AB T/R
Tube BTS141 Current Limiting (Fixed) Over Temperature Over Voltage SINK power distribution switch 2.54mm Not Required 12A 25m Ohm
IC, MOSFET, SMART SWITCH TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id: 12A; Current Limit Min: 25A; Drain Source Voltage Vds: 60V; ESD HBM: 1kV; On Resistance Rds(on): 28mohm; Powe
Smart Power Switch, -40 To 150 Deg C; Power Load Switch Type:Low Side; No. Of Channels:1Channels; Input Voltage:60V; Current Limit:35A; On State Resistance:1Mohm; Ic Case/Package:To-220; No. Of Pins:3Pins; Thermal Protection:Yes Rohs Compliant: No |Infineon Technologies BTS141
N channel vertical power FET in Smart SIPMOS chip on chip technology. Providing embedded protection functions. | Summary of Features: Logic Level Input; Input Protection (ESD); Thermal shutdown with latch; Overload protection; Short circuit protection; Overvoltage protection; Current limitation; Status feedback with external input resistor; Analog driving possible; AEC qualified; Green product (RoHS compliant) | Target Applications: 24V applications; Straight lead
IC, MOSFET, SMART SWITCH, TO-220; Module Configuration:Low Side; Peak Output Current:12A; Output Resistance:0.025ohm; Input Delay:40µs; Output Delay:70µs; Supply Voltage Range:1.3V to 10V; Driver Case Style:TO-220; No. of Pins:3; Operating Temperature Range:-40°C to +150°C; SVHC:No SVHC (19-Dec-2011); Continuous Drain Current Id:12A; Current Limit Min:25A; Drain Source Voltage Vds:60V; ESD HBM:1kV; On Resistance Rds(on):28mohm; Package / Case:TO-220AB; Power Dissipation Pd:149W; Power Dissipation Pd:149W; Power Dissipation Ptot Max:149W; Supply Voltage:34V; Termination Type:Through Hole; Transistor Case Style:TO-220AB; Transistor Polarity:N Channel; Transistor Type:MOSFET; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSIP
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating25 A
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vds)60 V
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Max Output Current12 A
Max Power Dissipation149 W
Max Supply Current100 µA
Min Operating Temperature-40 °C
Nominal Input Voltage60 V
Nominal Supply Voltage (DC)5 V
Number of Channels1
Number of Circuits1
Number of Outputs1
Number of Transmitters1
On-State Resistance30 mΩ
Output Voltage60 V
Package Quantity500
Power Dissipation149 W
Schedule B8542390000
Voltage Rating (DC)60 V
Dimensions
Height - Seated (Max)20.7 mm
Length10 mm
Terminal Pitch2.54 mm
Width4.4 mm