Infineon BSZ096N10LS5ATMA1

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TSDSON-8, RoHS

MOSFET, N-CH, 100V, 40A, 150DEG C, 69W; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON-FL; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.