공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-08-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon BSP613P L6327에 대한 설명입니다.
Trans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
SIPMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, 60V, 2.9A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
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기술 사양
Physical
Case/PackageSOT-223-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)2.9 A
Current Rating-2.9 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance875 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max130 mΩ
Rise Time9 ns
Threshold Voltage-3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time6.7 ns
Voltage Rating (DC)-60 V