관련 부품
InfineonBSP295L6327HTSA1
MOSFET N-CH 60V 1.8A SOT223-4 N-Channel 60 V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
InfineonBSP318SH6327XTSA1
MOSFET N-CH 60V 2.6A SOT223-4 N-Channel 60 V 2.6A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4
Diodes Inc.DMN6068SE-13
N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3
설명
유통업체에서 제공한 Infineon BSP170PL6327HTSA1에 대한 설명입니다.
MOSFET P-CH 60V 1.9A SOT223-4 P-Channel 60 V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Trans MOSFET P-CH 60V 1.9A 4-Pin(3+Tab) SOT-223 T/R
1.9 A 60 V 0.3 ohm P-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.9 A
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance410 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation1.8 W
Rds On Max300 mΩ
Turn-Off Delay Time92 ns
Turn-On Delay Time14 ns
규정 준수
환경 분류
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책