공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
설명
유통업체에서 제공한 Infineon BSP149에 대한 설명입니다.
1.8W 20V 1V 11nC@5V N-Ch MOSFET 200V 3.5Ω@0V 1.8Ω@10V 326pF@25V SOT-223 SMD/TH 6.5mm(L)×1.6mm(H)
SIPMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 480mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1.4V; Power Dissipat
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:0.48A; On Resistance, Rds(on):3.5ohm; Package/Case:SOT-223; Termination Type:SMD; Power Dissipation, Pd:1.8W; Current, Idm pulse:1.44A ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)660 mA
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vds)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance326 pF
Max Dual Supply Voltage200 V
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.8 W
TerminationSMD/SMT
Threshold Voltage-1.4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.6 mm
Length6.5 mm