공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-01-01
Lifecycle StatusNRND (Last Updated: 4 months ago)
LTB Date2009-09-30
LTD Date2010-03-31
관련 부품
InfineonFS50R12W2T4BOMA1
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MicrochipAPTGT35A120T1G
Pm-Igbt-Tfs-Sp1 Rohs Compliant: Yes |Microchip Technology APTGT35A120T1G
설명
유통업체에서 제공한 Infineon BSM50GD120DN2BOSA1에 대한 설명입니다.
Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A
Transistor IGBT Module N-CH 1200V 72A 20V Screw Mount Tray
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel
IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
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- SIM
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- LNFINEON
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- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageModule
MountScrew, Through Hole
Number of Pins17
Number of Terminals17
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.2 V
Collector Emitter Voltage (VCEO)1.2 kV
Max Collector Current72 A
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Operating Temperature-40 °C
Number of Elements6
Power Dissipation350 W
Dimensions
Height17 mm
Length107.5 mm
Width45 mm