공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-09-30
LTD Date2024-06-30
관련 부품
설명
유통업체에서 제공한 Infineon BSM200GA120DN2에 대한 설명입니다.
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel
IGBT Module 1200V 300A Single Switch
RS APAC
IGBT 200A 1200V SINGLE
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
BSM 200GA120DN2
IP4220CZ6 NXP
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageModule
MountPanel, Screw
Number of Pins562
Number of Terminals5
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current300 A
Element ConfigurationSingle
Max Collector Current200 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.55 kW
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation1.55 kW
Turn-Off Delay Time550 ns
Turn-On Delay Time110 ns
Dimensions
Height36.5 mm
Length106.4 mm
Width61.4 mm