Infineon BSG0811NDATMA1

MOSFET 2N-CH 25V 19A/41A 8TISON / Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R

6.25KW 16V 2V 5.6nC@ 4.5V @ Q1,20nC@ 4.5V @ Q2 1N,2N 25V 3m¦¸@ 10V @ Q 1,800¦Ì¦¸@ 10V @ Q 2 50A 780pF@ 12V @ Q 1,2.7nF@ 12V @ Q 2 TISON(EP) , 1.1mm

MOSFET, DUAL N-CH, 25V, 50A, TISON; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 6.25W; Transistor Case Style: TISON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Mosfet, N-Ch, 25V, 50A, 150Deg C, 6.25W; Channel Type:N Channel; Drain Source Voltage Vds N Channel:25V; Drain Source Voltage Vds P Channel:25V; Continuous Drain Current Id N Channel:50A; Continuous Drain Current Id P Channel:50A Rohs Compliant: Yes |Infineon Technologies BSG0811NDATMA1

OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.