Infineon BSC750N10NDGATMA1

Name: Infineon BSC750N10NDGATMA1
Brand: Infineon
SKU: BSC750N10NDGATMA1

Transistor MOSFET Array Dual N-CH 100V 13A 8-Pin TDSON T/R

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

비공인 딜러

모든 가격 할인 보기

Distributor		SKU		Min
Win Source		WS-BSC750N10ND G	20	3		13.792	11.206	11.206	11.206	33m
Worldway Electronics	3	BSC750N10ND G	18,004	7		0.605	0.594	0.571	0.559	23h
IC Components Ltd.		BSC750N10NDG	17,900		9.050	9.050	9.050	9.050	9.050	4d
Aztech		BSC750N10NDGATMA1	7,679		1.430	1.430	1.430	1.430	1.430	18h
Anlinkda	2	BSC750N10ND G	57,640		0.633	0.567	0.484	0.474	0.453	1d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon BSC750N10NDGATMA1에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지15년 전

Upverter

_legacy Avnet

iiiC

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-12-14

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

설명

유통업체에서 제공한 Infineon BSC750N10NDGATMA1에 대한 설명입니다.

Transistor MOSFET Array Dual N-CH 100V 13A 8-Pin TDSON T/R

Avnet

Trans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP

Verical

Compliant Surface Mount 1 mm Contains Lead Tape & Reel 4 ns Halogen Free 8

Augswan

Power Field-Effect Transistor, 3.2A I(D), 100V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

PFET, 3.2A I(D), 100V, 0.075OHM,

DigiKey

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

CAP CER 2.9PF 25V C0G/NP0 01005

Utmel Electronic

MOSFET, N CH, 13A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):62mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Power Dissipation Pd:26W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC