Infineon BSC112N06LDATMA1
$ 0.691
Production
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-12-11
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Infineon BSC112N06LDATMA1에 대한 설명입니다.
Dual Mosfet, N-Ch, 60V, 20A, Tdson Rohs Compliant: Yes |Infineon Technologies BSC112N06LDATMA1
TRENCH 40<-<100V / Mosfet Array 60V 20A (Tc) 65W (Tc) Surface Mount PG-TDSON-8-4
N-Channel (Dual) 60 V 20 A 65 W Surface Mount Mosfet Array - PG-TDSON-8-4
Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.0095 ohm
Power Transistor N-Channel 60V 20A 8-Pin TDSON
Avnet Japan
Power Field-Effect Transistor, 57A I(D), 60V, 0.0112ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 60V, 20A, TDSON;
DUAL MOSFET, N-CH, 60V, 20A, TDSON;
Infineon NMOS, Vds=60 V, 57 A, PG-TDSON-8
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)57 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11.2 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)16 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation65 W
Turn-Off Delay Time51 ns
Turn-On Delay Time11 ns
Dimensions
Height1 mm