설명
유통업체에서 제공한 Infineon BSC100N10NSFGATMA1에 대한 설명입니다.
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
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기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11.4 A
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Dual Supply Voltage100 V
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance10 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation156 W
Rds On Max10 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time18 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책