Infineon BSC0921NDIATMA1

Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin TISON T/R

2.5W 20V 2V 5.9nC@ 4.5V @ Q1,22nC@ 4.5V @ Q2 1N,2N 30V 5m¦¸@ 10V @ Q 1,1.6m¦¸@ 10V @ Q 2m¦¸ 40A 770pF@ 15V @ Q 1,2.7nF@ 15V @ Q 2 SON , 5.9mm*5.15mm*1.27mm

MOSFET, DUAL N-CH, 30V, 40A, TISON; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 3.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Mosfet, N-Ch, 30V, 40A, 150Deg C, 2.5W; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:40A; Continuous Drain Current Id P Channel:40A Rohs Compliant: Yes |Infineon Technologies BSC0921NDIATMA1