Infineon BSC0803LSATMA1
$ 0.718
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-05-20
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2023-12-31
LTD Date2024-06-30
설명
유통업체에서 제공한 Infineon BSC0803LSATMA1에 대한 설명입니다.
MOSFET, N-CH, 100V, 44A, PG-TDSON; Available until stocks are exhausted Alternative available
Transistor MOSFET N-Channel 100V 44A 8-Pin SOIC
Trans MOSFET N-CH 100V 10A 8-Pin TDSON EP T/R
Power Field-Effect Transistor, 44A I(D), 100V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon NChannel EnhancedMOSFETTube, Vds=100 V, 44 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
场效应管, MOSFET, N沟道, 100V, 44A, PG-TDSON;
Infineon BSC0803LSATMA1 MOSFET
RS APAC
N-CH 100V 44A 12,2mOhm SuperSO8
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)44 A
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vds)100 V
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1