Infineon BSC059N04LS6ATMA1

Power MOSFET, N Channel, 40 V, 59 A, 0.0059 ohm, TDSON, Surface Mount

OptiMO 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance

Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R

38W 20V 2.3V 9.4nC@ 10V 2N 40V 7m¦¸@ 10V,60A 59A 830pF@20V TDSON-8-EP

MOSFET N-CH 40V 17A TDSON / N-Channel 40 V 17A (Ta), 49A (Tc), 59A (Tc) 3W (Ta), 38W (Tc) Surface Mount PG-TDSON-8-6

Power Field-Effect Transistor, 49A I(D), 40V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

40V, 59A, 5.9MOHM, N-CHANNEL, SuperSO8 5x6

Mosfet, N-Ch, 40V, 59A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon Technologies BSC059N04LS6ATMA1

The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.