공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-05-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon BSC034N10LS5ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 100 V, 100 A, 0.0034 ohm, TDSON, Surface Mount
Mosfet, N-Ch, 100V, 100A, 150Deg C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon Technologies BSC034N10LS5ATMA1
OptiMOS™ 5 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The device's low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Number of Terminals5
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.4 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation156 W
Turn-Off Delay Time40 ns
Turn-On Delay Time9.6 ns
Dimensions
Height1.1 mm