데이터시트 및 문서
Infineon BSC009NE2LS5IATMA1에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트4년 전
공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-10
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
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25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH4255DTRPBF
25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PG-TISON-8, RoHS
InfineonIRFH8202TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
NXP SemiconductorsPSMN1R7-25YLC,115
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPSMN1R9-25YLC,115
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon BSC009NE2LS5IATMA1에 대한 설명입니다.
Mosfet, N-Ch, 25V, 100A, Tdson Rohs Compliant: Yes |Infineon Technologies BSC009NE2LS5IATMA1
25V 40A 0.95mΩ@10V,30A 2.5W 2V@250uA 1 N-Channel DFN-5(5.1x6.1) MOSFETs ROHS
Power Field-Effect Transistor, 40A I(D), 25V, 0.00135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R
868W 16V 36nC 2N 25V 950¦Ì¦¸@ 10V,30A 40A 3.2nF TDSON-8 5.28mm
MOSFETs 25V 74W SMT PGTDSON8_6.35X5.35MM-EP 217A N-Channel
Optimized for high performance buck converters
MOSFET N-CH 25V 40A 8TDSON IND
N-CH 25V 217A 0.8mOhm SuperSO8
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.35 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.4 nF
Max Dual Supply Voltage25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance950 µΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max950 µΩ
Rise Time33 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time5 ns
Dimensions
Height1.1 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책