유통업체에서 제공한 Infineon BSC007N04LS6ATMA1에 대한 설명입니다.
Mosfet TRENCH 40V N channel 0.7mohm Power pack 5x6 PG-TDSON-8
N-Channel 40V 100A 2.3V @ 250uA 0.7mΩ @ 50A,10V 188W TDSON-8 FL MOSFET RoHS
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
20V 2.3V 94nC 1N 40V 700¦Ì¦¸@ 10V,50A 100A 8.4nF@ 20V TDSON-8
Power Field-Effect Transistor, 319A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 40V, 100A, TDSON;
N-CH 40V 100A 0.7mOhm TDSON-8FL
Compliant 1 mm 3 W 1 8 ns 40 ns 175 °C
FET Input Operational Amplifier
Mosfet, N-Ch, 40V, 100A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon Technologies BSC007N04LS6ATMA1
The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.