TRANSISTOR, PNP RF SOT-23; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:5GHz; Power Dissipation Pd:200mW; DC Collector Current:25mA; DC Current Gain hFE:15; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic Max:25mA; Current Ic Continuous a Max:25mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3.5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:20; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Ptot Max:200mW; SMD Marking:W1; Termination Type:SMD; Transistor Case Style:SOT-23; Transistor Type:Small Signal; Voltage Vcbo:20V