RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4V; Transition Frequency ft: 40GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 180hFE; RF Transistor Case
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 50 / Collector-Emitter Voltage (Vceo) V = 4.1 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 13 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 42 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
Summary of Features: High gain low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz; High maximum stable gain :Gms = 24 dB at 1.8 GHz; Gold metallization for extra high reliability; 70 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101