RF BIP TRANSISTORS; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 24GHz; Power Dissipation Pd: 500mW; DC Collector Current: 170mA; DC Current Gain hFE: 95hFE; RF Transistor Case: S
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 170 / Collector-Emitter Voltage (Vceo) V = 4.5 / DC Current Gain (hFE) = 95 / Collector-Base Voltage (Vcbo) V = 15 / Emitter-Base Voltage (Vebo) V = 1.5 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 24 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel