가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BFP193WH6327XTSA1 | 2,800 | 5 | Cut Tape | ||||||||
| Arrow Electronics | BFP193WH6327XTSA1 | 22,590 | 1 | |||||||||
| DigiKey | BFP193WH6327XTSA1CT-ND | 49,812 | 1 | Cut Tape | ||||||||
| Avnet | BFP193WH6327XTSA1 | 0 | 9K | 2d | ||||||||
| Future Electronics | BFP193WH6327XTSA1 | 0 | 3K | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
ROHM2SCR523EBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
NXP SemiconductorsBFU520XRVL
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN
ROHM2SCR502EBTL
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Infineon BFP193WH6327XTSA1에 대한 설명입니다.
BFP193W Series 12 V 80 mA Low Noise Silicon Bipolar RF Transistor - SOT-343
RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 12 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 20 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 8 / Power Dissipation (Pd) mW = 580 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101
RF TRANSISTOR, NPN, SOT-343; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:12V; Continuous Collector Current Ic:80mA; ft, Typ:8GHz; Case Style:SOT-343; Power Dissipation Pd:580mW; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Associated Gain Ga:20.5dB; Noise:1dB; Test Frequency:900MHz; Transistors, No. of:1; ft, Min:6000MHz; Current Ic @ Gms:30mA; Current Ic Continuous a Max:0.05A; Current Ic Fc Measurement:10mA; Current Ic Max:0.05A; Current Ic av:80mA; Current Ic hFE:30mA; Gms:13dB; Min Hfe:50; Noise Level, Fc @ Ic:2.1dB; Power, Ptot:580mW; SMD Marking:RCs; Voltage, Vcbo:20V
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기술 사양
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals3
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Voltage (VCEO)12 V
Emitter Base Voltage (VEBO)2 V
Frequency8 GHz
Gain20.5 dB
hFE Min50
Max Breakdown Voltage12 V
Max Collector Current80 mA
Max Operating Temperature150 °C
Max Power Dissipation580 mW
Min Operating Temperature-55 °C
Noise Figure1 dB
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation580 mW
Power Gain20.5 dB
TerminationSMD/SMT
Test Frequency900 MHz
Transition Frequency8 GHz
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책