공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-06-30
LTD Date2014-12-30
관련 부품
Diodes Inc.DCX51-16-13
PNP SURFACE MOUNT TRANSISTOR / Trans GP BJT PNP 45V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
ROHM2SD1664T100R
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SD1664T100P
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ROHMDTC023YEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Infineon BCX5416E6327에 대한 설명입니다.
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
NPN TRANSISTOR 45V 1A 1W SOT89
1000 mA 45 V NPN Si SMALL SIGNAL TRANSISTOR
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX54 - GENERAL PURPOSE TRANSISTOR;
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기술 사양
Physical
Case/PackageSOT-89-4
MountSurface Mount
Number of Terminals3
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage45 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height1.6 mm