가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BCR112E6327HTSA1 | 0 | 5 | Cut Tape | ||||||||
| Future Electronics | BCR112E6327HTSA1 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | BCR112E6327HTSA1 | 0 | 39K | 12h | ||||||||
| Arrow Electronics | BCR112E6327HTSA1 | 0 | 39K | |||||||||
| Farnell | BCR112E6327HTSA1 | 0 | 5 | Cut Tape | 9h |
공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-08-01
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2023-12-31
LTD Date2024-12-31
관련 부품
onsemiKSC1623OMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount
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Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 300 mW, SOT-23, Surface Mount
Diodes Inc.BC847C-7-F
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 310 mW, SOT-23, Surface Mount
ROHM2SCR502EBTL
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
ROHM2SCR522EBTL
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Infineon BCR112E6327HTSA1에 대한 설명입니다.
Bipolar junction transistor, NPN, 100 mA, 50 V, SMD, SOT-23, BCR112E6327
BCR112 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Rf Trans, Npn, 50V, 0.1A, Sot-23 Rohs Compliant: Yes |Infineon Technologies BCR112E6327HTSA1
NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
DIGITAL TRANS, 50V, 4.7K/4.7K, SOT-23-3; Transistor Polarity:-; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:-; DC Collector Current:-; DC Current Gain hFE:-; Transistor Case St
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
hFE Min20
Input Resistance4.7 kΩ
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency140 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책