공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-02-01
Lifecycle StatusEOL (Last Updated: 2 months ago)
LTB Date2015-10-15
LTD Date2016-10-15
관련 부품
onsemiBC859BLT3G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
onsemiBC859BLT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Diodes Inc.DDTA114ECA-7-F
Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Diodes Inc.DDTA114YCA-7-F
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.DDTA113ZCA-7-F
DDTA Series 200 mW 1 KO / 10 KO PNP Pre-Braised Small Signal Transistor - SOT-23
onsemiFJV4109RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
onsemiFJV4110RMTF
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236)
설명
유통업체에서 제공한 Infineon BC858CE6327HTSA1에 대한 설명입니다.
Transistor: PNP; bipolar; 30V; 100mA; 330mW; SOT23
TRANS PNP 30V 0.1A SOT-23 Bipolar (BJT) Transistor PNP 30 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23
Trans GP BJT PNP 30V 0.1A 330mW Automotive 3-Pin SOT-23 T/R
BC858 Series PNP 30 V 100 mA Silicon AF Transistor Array - SOT-23-3
PNP SILICON AF TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)5 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min420
Max Breakdown Voltage30 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityPNP
Power Dissipation330 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-30 V
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책