공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-02-28
LTD Date2018-08-31
관련 부품
설명
유통업체에서 제공한 Infineon AUIRLU2905에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, IPAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 42A Automotive 3-Pin(3+Tab) IPAK Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P CH, 55V, 42A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:160A; Voltage Vgs th Min:1V
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
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- Infineon Technologies
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기술 사양
Physical
Case/PackageTO-251-3
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max27 mΩ
Rise Time84 ns
Threshold Voltage1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width7.49 mm
규정 준수
환경 분류
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책